54（4）Which of the following is Notcorrect?

ompared with 3C SiC, 6H SiC has larger band gap and no requirement of epitaxy.
B、The interface roughness and charged interface state of the MOSFET effect its transconductances through limit the electron surface mobility. 
C、SiC device has higher operation filed and thinner light doping region than Si device.
D、When 3C SiC MOSFET was operated at 650 degree, its conductance, drain current and output conductance were all decreased.